1 elm34400aa - n 4 - g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - a mbient steady-state r ja 5 0 c /w parameter symbol limit unit note drain - s ource voltage vds 3 0 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id 10 a t a = 70 c 8 pulsed d rain current idm 5 0 a 3 power dissipation t c = 25 c pd 2.5 w t c = 70 c 1.6 j unction and storage temperature range tj , tstg - 55 to 150 c elm34400aa - n uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. ? vds = 3 0v ? id = 10 a ? rds (on) < 1 2.5 m (vgs = 10 v) ? rds (on) < 2 0 m (vgs = 4 .5v) single n-channel mosfet pin configuration c ircuit so p - 8 (top vi ew) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 s g d t a = 25 c . u nless otherwise noted.
2 elm34400aa - n 4 - electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 3 0 v zero g ate voltage drain current idss vds = 24 v, vgs = 0v 1 a vds = 2 0 v, vgs = 0v, t a = 55 c 10 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 1.0 1.5 2.5 v on s tate drain current i d ( on ) vgs = 10 v, vds = 5v 2 0 a 1 static drain - s ource on - r esistance r d s (o n ) vgs = 10 v, i d = 10 a 9.5 12.5 m 1 vgs = 4 .5v, id = 5 a 13.0 20.0 m forward transconductance gfs vds =1 5v, id = 10 a 38 s 1 diode forward voltage vsd i f = 1a, vgs = 0v 1.1 v 1 max. body - d iode continuous c urrent is 2 . 3 a pulsed body - d iode c urrent ism 4.6 a 3 dynamic parameters input capacitance c iss vgs = 0v, vds = 15 v, f = 1mh z 3100 pf output capacitance c oss 600 pf reverse transfer capacitance c r ss 275 pf switching parameters total gate charge q g vgs = 10 v, vds = 15 v, id = 10 a 43.0 60.0 nc 2 gate - s ource charge q gs 9.0 nc 2 gate - d rain charge q gd 7.0 nc 2 turn - o n delay time t d (on) vgs = 10 v, vds = 15 v , id = 1 a r l = 25 , rgen = 6 15 30 ns 2 turn - o n rise t ime t r 9 20 ns 2 turn - o ff delay time t d ( of f ) 70 100 ns 2 turn - o ff fall t ime t f 20 80 ns 2 body diode reverse recovery time t rr i f = 2.3 a, d if /dt=100a/ s 50 80 ns note : 1. pulsed width 300 sec and duty cycle 2%; 2. independent of operating temperature ; 3. pulsed width limited by maximum junction temperature. 4 . duty cycle 1 %. single n-channel mosfet t a = 25 c . u nless otherwise noted.
3 elm34400aa - n 4 - typical electrical and thermal characteristics single n-channel mosfet
4 elm34400aa - n 4 - single n-channel mosfet
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